• DRAM series

◦ DDR5: Utilizing a 12nm process, it supports a maximum speed of 5600MT/s (such as K4RAH165VB-BIWM), integrates ODECC error correction technology, and reduces power consumption by 20% compared to DDR4. It is suitable for AI servers, data centers, and high-end laptops.

LPDDR5X: Specifically designed for mobile devices, it has a speed of up to 7500MT/s and a 58% reduction in power consumption. Typical models include K3LK4G085BM-BCRC, which are used in flagship phones and thin and light laptops.

• NAND Flash series

V-NAND: With over 200 stacked layers, a single Die capacity of up to 1Tb, an interface speed of 3.6Gbps, support for UFS4.1 and PCIe 5.0, it is widely used in SSDS (such as 990 Pro) and embedded storage.

eUFS: Integrated controller, sequential read and write speed over 2.1GB/s, suitable for smartphone storage modules.