China's New Year's Day · A Fresh Outlook for 2026: BenteIC Empowers the New Era of Computing with Storage Chip Strength
发布时间：2025-12-29 15:11:44
As the New Year's Day bell is about to ring in the prelude to 2026, the digital wave surges forward. As the core cornerstone of the computing era, storage chips are embracing the dual resonance of an AI-driven super cycle and technological innovation. BenteIC rides the tide and formulates an overall strategy; with years of accumulated technical expertise and forward-looking deployment, we deliver a high-impact performance at the dawn of the new year. We empower the new growth of thousands of industries in the new year with faster, more reliable, and smarter semiconductor storage solutions, letting the strength of localized storage shine brightly in the new year.
In 2026, the storage chip market is entering a definite upward cycle. The capital expenditure of the world's top eight cloud vendors is targeted at 600 billion US dollars, the shipment volume of AI servers is expected to double, the demand for HBM is set to surge by 63%-70%, intelligent vehicle storage is moving toward the terabyte level, and the storage specifications of AI PCs and high-end smartphones are continuously upgraded—all jointly igniting new opportunities in the storage price-up cycle. BenteIC accurately grasps the market pulse and builds a full-scenario product matrix covering DRAM and NAND Flash: DDR5 memory, with its high-speed transmission of 3200-6400 MT/s and low-power consumption advantages, is tailored to the massive data processing needs of AI server storage; coupled with the subsequent iterative DDR6 technology, we have made early arrangements for next-generation computing support. 3D NAND flash memory breaks through the stacking layer count of over 176 layers; combined with QLC and TLC technologies, it achieves the optimal balance between capacity and cost, satisfying the hot and cold tiered storage upgrade of data center storage. Meanwhile, SLC and MLC products provide high-reliability guarantees for industrial control scenarios. We also make a forward-looking deployment of HBM3E and HBM4 high-bandwidth memory; relying on 3D stacking and through-silicon via technology, we break the "memory wall" bottleneck, provide robust power for large model training and inference, and seize the core track of the high-end storage market.
In the wave of localization replacement, BenteIC takes on the responsibility of local storage and accelerates the process of storage localization. Relying on technological breakthroughs in the domestic industrial chain, we have realized large-scale mass production of core products: the yield rate of DDR5 memory is steadily improved, and the technical gap between 3D NAND flash memory and international mainstream technologies is continuously narrowing. LPDDR5X has entered the AI smartphone and AI PC tracks by virtue of its low-power consumption advantages, and successfully penetrated core fields such as enterprise-grade SSDs, consumer electronics, and IoT storage. We provide stable supply for enterprises like Huawei, Inspur, and Alibaba Cloud, helping domestic storage evolve from "usable" to "high-performance". To meet the demands of L3 and above autonomous driving in intelligent vehicles, we launch the UFS 4.0 storage solution that complies with automotive-grade standards, featuring wide temperature adaptability and high reliability. For data security needs, we deeply integrate the computing-in-memory architecture and PUF security technology to create new storage chips with low power consumption and high security. This not only solves the energy efficiency bottleneck of artificial intelligence inference, but also builds a solid data security defense line for IoT devices, demonstrating the strong strength of China's intelligent manufacturing.
Facing the market dividend of DRAM demand growth of 26%-30% and NAND demand growth of 28%-30% in 2026, BenteIC continues to increase R&D investment, keep up with cutting-edge technology routes such as DDR6 and 3D NAND with over 400 layers, optimize the transmission rate of PCIe 5.0 SSDs, and enhance the product competitiveness of high-bandwidth storage and high-capacity storage. We deepen collaborative cooperation with upstream and downstream enterprises, seize the first opportunity in the HBM4 mass production process, address the over 80% market gap of high-end storage, and make every storage chip a "power cell" of the digital economy. At the same time, we accurately meet the growing demand for DDR4 in general server storage, alleviate the 10%-15% market supply gap, cover multiple scenarios such as consumer electronics, industrial control, and automotive electronics with a full-category layout, and achieve win-win growth with partners in the storage price-up cycle.
A new year ushers in a new starting point, and a new journey calls for new achievements. BenteIC sails with technology and rows with innovation, standing at the forefront of the storage industry in 2026. We will break through performance boundaries with high-speed storage, practice the green concept with low-power storage, and consolidate the industrial foundation with localized storage. We will continue to deepen the research and development of core technologies such as computing-in-memory and HBM, accompany partners to ride the tide and forge ahead in the new year, and jointly write a new chapter in China's storage industry!
In 2026, the storage chip market is entering a definite upward cycle. The capital expenditure of the world's top eight cloud vendors is targeted at 600 billion US dollars, the shipment volume of AI servers is expected to double, the demand for HBM is set to surge by 63%-70%, intelligent vehicle storage is moving toward the terabyte level, and the storage specifications of AI PCs and high-end smartphones are continuously upgraded—all jointly igniting new opportunities in the storage price-up cycle. BenteIC accurately grasps the market pulse and builds a full-scenario product matrix covering DRAM and NAND Flash: DDR5 memory, with its high-speed transmission of 3200-6400 MT/s and low-power consumption advantages, is tailored to the massive data processing needs of AI server storage; coupled with the subsequent iterative DDR6 technology, we have made early arrangements for next-generation computing support. 3D NAND flash memory breaks through the stacking layer count of over 176 layers; combined with QLC and TLC technologies, it achieves the optimal balance between capacity and cost, satisfying the hot and cold tiered storage upgrade of data center storage. Meanwhile, SLC and MLC products provide high-reliability guarantees for industrial control scenarios. We also make a forward-looking deployment of HBM3E and HBM4 high-bandwidth memory; relying on 3D stacking and through-silicon via technology, we break the "memory wall" bottleneck, provide robust power for large model training and inference, and seize the core track of the high-end storage market.
In the wave of localization replacement, BenteIC takes on the responsibility of local storage and accelerates the process of storage localization. Relying on technological breakthroughs in the domestic industrial chain, we have realized large-scale mass production of core products: the yield rate of DDR5 memory is steadily improved, and the technical gap between 3D NAND flash memory and international mainstream technologies is continuously narrowing. LPDDR5X has entered the AI smartphone and AI PC tracks by virtue of its low-power consumption advantages, and successfully penetrated core fields such as enterprise-grade SSDs, consumer electronics, and IoT storage. We provide stable supply for enterprises like Huawei, Inspur, and Alibaba Cloud, helping domestic storage evolve from "usable" to "high-performance". To meet the demands of L3 and above autonomous driving in intelligent vehicles, we launch the UFS 4.0 storage solution that complies with automotive-grade standards, featuring wide temperature adaptability and high reliability. For data security needs, we deeply integrate the computing-in-memory architecture and PUF security technology to create new storage chips with low power consumption and high security. This not only solves the energy efficiency bottleneck of artificial intelligence inference, but also builds a solid data security defense line for IoT devices, demonstrating the strong strength of China's intelligent manufacturing.
Facing the market dividend of DRAM demand growth of 26%-30% and NAND demand growth of 28%-30% in 2026, BenteIC continues to increase R&D investment, keep up with cutting-edge technology routes such as DDR6 and 3D NAND with over 400 layers, optimize the transmission rate of PCIe 5.0 SSDs, and enhance the product competitiveness of high-bandwidth storage and high-capacity storage. We deepen collaborative cooperation with upstream and downstream enterprises, seize the first opportunity in the HBM4 mass production process, address the over 80% market gap of high-end storage, and make every storage chip a "power cell" of the digital economy. At the same time, we accurately meet the growing demand for DDR4 in general server storage, alleviate the 10%-15% market supply gap, cover multiple scenarios such as consumer electronics, industrial control, and automotive electronics with a full-category layout, and achieve win-win growth with partners in the storage price-up cycle.
A new year ushers in a new starting point, and a new journey calls for new achievements. BenteIC sails with technology and rows with innovation, standing at the forefront of the storage industry in 2026. We will break through performance boundaries with high-speed storage, practice the green concept with low-power storage, and consolidate the industrial foundation with localized storage. We will continue to deepen the research and development of core technologies such as computing-in-memory and HBM, accompany partners to ride the tide and forge ahead in the new year, and jointly write a new chapter in China's storage industry!
